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Mai Inganta Ƙarshen Yumbu na Silicon Carbide (SiC) - Babban Tauri don Kula da Wafer Mai Zafi Mai Tsanani

Mai Inganta Ƙarshen Yumbu na Silicon Carbide (SiC) - Babban Tauri don Kula da Wafer Mai Zafi Mai Tsanani

Takaitaccen Bayani:

An ƙera na'urar ƙarshen yumbu ta St.Cera daga silikon carbide mai tsafta (SiC abun ciki 99.72%, Si 0.05%) ta amfani da kayan S1111. Yana ba da kyawawan halaye na injiniya: ƙarfin lanƙwasa 449 MPa (wanda aka auna), modulus mai roba 457 GPa (wanda aka auna), da taurin Vickers 25-28 GPa (wanda aka saba). Ƙananan yawa (3.10-3.15 g/cm³, wanda aka saba) yana ba da babban tauri, wanda ya dace da robots masu canja wurin wafer mai sauri. Tare da ƙarfin zafi na 120-150 W/m·K (wanda aka saba) da kuma ƙimar faɗaɗa zafi na 4.0-4.5×10⁻⁶/℃ (wanda aka saba), wannan na'urar ƙarshen tana wargaza zafi yadda ya kamata kuma tana kiyaye daidaiton girma yayin sarrafa zafin jiki mai yawa (har zuwa 1600–1700°C, babu kaya). Launin baƙi/toka da kuma rashin shan ruwa yana tabbatar da dacewa da tsabtataccen ɗaki.


Cikakken Bayani game da Samfurin

Alamun Samfura

An ƙera na'urar ƙarshen yumbu ta St.Cera daga silikon carbide mai tsafta (SiC abun ciki 99.72%, Si 0.05%) ta amfani da kayan S1111. Yana ba da kyawawan halaye na injiniya: ƙarfin lanƙwasa 449 MPa (wanda aka auna), modulus mai roba 457 GPa (wanda aka auna), da taurin Vickers 25-28 GPa (wanda aka saba). Ƙananan yawa (3.10-3.15 g/cm³, wanda aka saba) yana ba da babban tauri, wanda ya dace da robots masu canja wurin wafer mai sauri. Tare da ƙarfin zafi na 120-150 W/m·K (wanda aka saba) da kuma ƙimar faɗaɗa zafi na 4.0-4.5×10⁻⁶/℃ (wanda aka saba), wannan na'urar ƙarshen tana wargaza zafi yadda ya kamata kuma tana kiyaye daidaiton girma yayin sarrafa zafin jiki mai yawa (har zuwa 1600–1700°C, babu kaya). Launin baƙi/toka da kuma rashin shan ruwa yana tabbatar da dacewa da tsabtataccen ɗaki.

 

Bayani dalla-dalla(bisa ga rahoton gwaji na SiC S1111 da aka bayar da kuma ƙimar da aka saba da ita):

Kadara darajar
Kayan Aiki SiC (99.72% SiC, 0.05% Si Kyauta)
Launi Baƙi/Toka
Yawan yawa 3.10–3.15 g/cm³
Shan Ruwa 0%
Ƙarfin Lankwasawa 449 MPa (matsakaici)
Taurin Karyewa 3.12 MPa·m¹/² (matsakaici)
Modulus mai laushi 457 GPA
Taurin Vickers 25–28 GPA
Tsarin isar da zafi (25°C) 120–150 W/m·K
CTE (25–1000°C) 4.0–4.5×10⁻⁶/℃
Matsakaicin Yanayin Amfani (babu kaya) 1600–1700°C

 

Aikace-aikace:

● Kula da wafer mai zafi sosai (bayan anneal, RTP, epitaxy)

● Dakunan etch na plasma da ke buƙatar juriya ga zaizayar ƙasa

● Robot masu saurin canja wuri (mai sauƙi, mai tauri sosai)

 

Masana'antu:

SiC foda sintering → Daidaiton niƙa bayanin hannu da abubuwan hawa CNC → lapping saman → tsaftacewar ultrasonic. Duba girma 100% da gwajin zubar helium don aikace-aikacen injin.

 

Sarrafa Inganci:

● Duba CMM na tsayi, faɗi, da kuma siffa

● Gwajin ƙarfin lankwasawa a kowane rukuni (a kowace rahoton gwaji)

● Duba ido a ƙarƙashin na'urar hangen nesa don gano lahani a saman fuska

 

Fa'idodi akan Alumina ko Karfe:

● Modulus mai ƙarfi 2× (457 vs ~380 GPa don alumina) – ƙarancin karkacewa

● 3× mafi girman ƙarfin lantarki na zafi - saurin watsar da zafi

● Yana jure wa >1600°C idan aka kwatanta da 800°C na alumina a cikin iska

● Ƙarancin yawa fiye da ƙarfe - rage nauyi kashi 40%

 

Keɓancewa:

Tsawonsa 150–450 mm, siffofi na gefen (riƙe gefen, Bernoulli, lebur), tsarin flange da aka ɗora bisa ga zanen OEM.

*Duk bayanan injina da ke sama sun fito ne daga rahoton gwajin da aka bayar (babban S1111). Ƙimar zafi da tauri sun zama ruwan dare ga wannan matakin SiC; da fatan za a tuntuɓe mu don samun takaddun shaida na musamman.*


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