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Injin tsabtace ruwa mai tushen silicon carbide (SiC) don yanayin zafi mai yawa da yanayin jini

Injin tsabtace ruwa mai tushen silicon carbide (SiC) don yanayin zafi mai yawa da yanayin jini

Takaitaccen Bayani:

An ƙera chuck ɗin yumbu mai tushen St.Cera daga silikon carbide mai tsarki (batch S1111, SiC 99.72%, kyauta Si 0.05%). Yana ba da ƙarfin lanƙwasa da aka auna na 449 MPa, taurin karyewa na 3.12 MPa·m¹/², da kuma modulus mai laushi na 457 GPa. Matsakaicin watsa wutar lantarki ta thermal (120–150 W/m·K) da ƙarancin faɗaɗa zafi (4.0–4.5×10⁻⁶/℃) yana ba da damar saurin hawan zafin jiki da ƙarancin warpage na wafer yayin zagayowar zafi. Ana iya tsara chuck ɗin azaman chuck mai ramuka (gudanar iskar gas iri ɗaya) ko chuck mai ramuka. Tare da matsakaicin zafin amfani na 1600–1700°C (babu kaya) da juriya ga yashewar jini, wannan chuck ɗin ya dace da sarrafa wafer mai zafi (annealing, RTP) da ɗakunan etch masu ƙarfi inda chucks na alumina ke lalacewa.


Cikakken Bayani game da Samfurin

Alamun Samfura

An ƙera chuck ɗin yumbu mai tushen St.Cera daga silikon carbide mai tsarki (batch S1111, SiC 99.72%, kyauta Si 0.05%). Yana ba da ƙarfin lanƙwasa da aka auna na 449 MPa, taurin karyewa na 3.12 MPa·m¹/², da kuma modulus mai laushi na 457 GPa. Matsakaicin watsa wutar lantarki ta thermal (120–150 W/m·K) da ƙarancin faɗaɗa zafi (4.0–4.5×10⁻⁶/℃) yana ba da damar saurin hawan zafin jiki da ƙarancin warpage na wafer yayin zagayowar zafi. Ana iya tsara chuck ɗin azaman chuck mai ramuka (gudanar iskar gas iri ɗaya) ko chuck mai ramuka. Tare da matsakaicin zafin amfani na 1600–1700°C (babu kaya) da juriya ga yashewar jini, wannan chuck ɗin ya dace da sarrafa wafer mai zafi (annealing, RTP) da ɗakunan etch masu ƙarfi inda chucks na alumina ke lalacewa.

 

Bayani dalla-dalla(bisa ga rahoton gwaji na SiC S1111 da aka bayar da kuma ƙimar da aka saba da ita):

Kadara darajar
Kayan Aiki SiC (99.72% SiC, 0.05% Si Kyauta)
Yawan yawa 3.10–3.15 g/cm³
Shan Ruwa 0%
Ƙarfin Lankwasawa 449 MPa
Taurin Karyewa 3.12 MPa·m¹/²
Modulus mai laushi 457 GPA
Taurin Vickers 25–28 GPA
Tsarin kwararar zafi 120–150 W/m·K
CTE (25–1000°C) 4.0–4.5×10⁻⁶/℃
Matsakaicin Yanayin Amfani (babu kaya) 1600–1700°C
Faɗi (fiye da 300mm) ≤5 μm
Ƙarshen Fuskar Ra ≤0.4 μm (an lanƙwasa)

 

Aikace-aikace:

● Yin amfani da zafin jiki mai yawa (annealing, RTP, ci gaban epitaxial)

● Mashin etch na plasma tare da juriya mai yawa ga fluorine

● Siraran wafer ɗin da aka sarrafa tare da dumama/sanyi iri ɗaya

● Maƙallin rami don tallafin wafer mara taɓawa

 

Masana'antu:

SiC sintering → niƙa daidai gwargwado na lanƙwasa da bayanin saman → ƙirƙirar tsarin ramuka na zaɓi (don injin chuck) → lapping → tsaftacewar ultrasonic. Ana duba kowane chuck 100% don lanƙwasa (laser interferometer) da daidaiton injin chuck (gwajin kwarara).

 

Sarrafa Inganci:

● Duba girman CMM (diamita, kauri, matsayin ramuka)

● Ma'aunin lanƙwasa bisa ga ASTM

● Gwajin zubar da Helium (don injinan injin tsabtace iska)

● Tabbatar da ƙarfin lanƙwasa a kowane rukuni (rahoton gwaji na duba)

 

Amfanin da ke kan Alumina Chucks:

● Ƙarfin watsa zafi mai ƙarfi (120–150 vs 32 W/m·K don alumina) – 4× saurin canja wurin zafi

● Ƙananan CTE (4.0 vs 7.2×10⁻⁶/℃) – yana rage matsin lamba a cikin zafin wafer

● Mafi kyawun juriya ga plasma - tsawon rai 10× a cikin etch ɗin fluorine

● Mafi girman zafin amfani (1600°C vs 800°C ga alumina)

 

Keɓancewa:

● Fuskar da ke da ramuka ko kuma mai kauri

● Diamita 100–450 mm, zagaye ko murabba'i

● Zoben rufewa ko sassan injin tsabtace yanki

● Zaɓin goyon bayan ƙarfe don hawa mai ƙarfi

Duk bayanan injina da ke sama sun fito ne daga rahoton gwajin da aka bayar (batch S1111). Ƙimar zafi da tauri sun zama ruwan dare ga wannan matakin SiC. Porous SiC chucks suna buƙatar ƙarin sarrafawa; da fatan za a nemi takamaiman porosity da girman rami.


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