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Musamman sarrafa Al2O3 yumbu Wafer Chuck
An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.
An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.
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Kayan aikin Semiconductor na musamman na ST.CERA Farantin yumbu
An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.
An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.
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Akwatin injin tsabtace alumina mai inci 12 don sarrafa wafer 300mm
An ƙera injin tsabtace injin na St.Cera mai inci 12 daidai gwargwado daga alumina mai tsafta mai kashi 99.8% (Al₂O₃) don sarrafa wafer mai girman 300mm. Buck ɗin yana da saman da aka yi wa tsagi mai kyau (faɗin tsagi 0.5–1.0 mm, tsayi 2–3 mm) don tabbatar da rarraba injin tsabtace mai daidai gwargwado a duk faɗin diamita na 300mm. Ana kiyaye shi a cikin 5 μm, wanda ke ba da damar daidaita wafer mara warp yayin yankewa, niƙa a bayan gida, da dubawa. Babban ƙarfin lanƙwasa na kayan (361 MPa) da tauri (16 GPa) suna ba da garantin kwanciyar hankali na dogon lokaci koda a lokacin zagayowar injin tsabtace mai maimaitawa.
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Kayayyakin Kayayyakin Yumbu don Kayan Aikin Binciken Semiconductor
An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.
An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.
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Mai ɗaukar kayan aikin Semiconductor na farantin yumbu
An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.
An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.
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Kayan Aikin Semiconductor na Kayayyakin Kayayyakin Yumbu
An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.
An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.
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Zoben Hatimin Alumina Mai Tsabta Mai Tsabta don Hatimin Ɗakin Zafi Mai Zafi
An tsara zoben hatimin St.Cera a matsayin madadin zoben O-polymer a cikin mawuyacin yanayi inda elastomers ke lalacewa. An ƙera shi daga alumina mai tsafta mai ƙarfi 99.8% (Al₂O₃), ana amfani da wannan zoben hatimi mai tauri a aikace-aikacen hatimin tsaye - yawanci an haɗa shi da gasket mai laushi na ƙarfe ko graphite - don samar da ingantaccen ɗaukar iskar gas ko iskar gas a yanayin zafi har zuwa 800°C da kuma a cikin yanayin plasma ko sinadarai masu ƙarfi. Kayan yana ba da iskar gas mara fitarwa, ƙarfin matsi mai yawa (ƙarfin lanƙwasa na ƙarƙashin ƙasa 361 MPa), da rashin kuzarin sinadarai (mai jure wa halogens, acid, da alkalis banda HF). Fuskokin hatimin da aka daidaita (faɗi ≤5 μm, ƙaiƙayin saman Ra ≤0.2 μm) suna tabbatar da cewa suna haɗuwa da ƙarfe ko kayan yumbu.
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Zoben Mai Tsabta na Alumina Chamber Mai Tsabta don Tsarin Plasma Etch & CVD
Zoben mayar da hankali na ɗakin St.Cera wani muhimmin kayan aiki ne da ake amfani da shi a cikin kayan aikin plasma etch, CVD, da PVD semiconductor. An ƙera shi daga 99.8% alumina mai tsabta (Al₂O₃), zoben yana kewaye gefen wafer don iyakance plasma da inganta rarrabawar kusurwar ion, ta haka yana inganta daidaiton etch a saman wafer. Kayan yana ba da juriya na plasma na musamman, ƙarfin dielectric mai girma (15×10⁶ V/m), da kwanciyar hankali na zafi har zuwa 1600°C, yana tabbatar da aminci na dogon lokaci a cikin yanayin plasma mai ƙarfi na fluorine ko chlorine. ID/OD mai daidaito da lanƙwasa (≤10 μm) yana ba da damar daidaita gefen wafer, rage lahani na gefen da samar da barbashi.
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Zoben yumbu na Alumina Mai Tsabta Mai Kyau don Dakunan Tsarin CVD / PVD
Zoben yumbu na St.Cera an ƙera shi musamman don amfani a cikin ɗakunan sarrafa CVD (Sinadarin Turare) da PVD (Physical Vapor Deposition). An ƙera shi daga 99.8% na alumina mai tsarki (Al₂O₃), wannan zoben yana aiki azaman layin ɗakin, zoben mayar da hankali, ko kayan aikin sarrafawa don iyakance plasma da kare bangon ɗakin daga zaizayar ƙasa. Kayan yana ba da kyakkyawan juriya ga plasma, ƙarfin dielectric mai yawa (15×10⁶ V/m), da kwanciyar hankali na zafi har zuwa 1600°C, yana tabbatar da tsawon rai a cikin yanayin plasma mai ƙarfi na fluorine. Daidaitaccen haƙurin girma (±0.05 mm akan ID/OD) da lanƙwasa (≤10 μm) yana ba da damar daidaita matsayin gefen wafer, yana inganta daidaiton ajiya da rage samar da barbashi.
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Bututun injin yumbu mai ramuka don sarrafa Wafer mai lanƙwasa
An ƙera bututun yumbu mai ramuka na St.Cera daga alumina mai tsabta mai girman 30-45% kuma girman ramukan ya kama daga 10 zuwa 100 μm. Ba kamar bututun da aka yi da ramuka na gargajiya ba, saman ramukan yana samar da injin tsabtace iska mai rarrabawa a duk bayan wafer ɗin, yana riƙe da wafers masu karkace, siriri, ko waɗanda aka haɗa ba tare da ɗagawa ko karyewa ba. Injin tsabtace iska mai laushi (wanda za'a iya daidaitawa ta hanyar mai hanawa) kuma yana hana alamar bayan.
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Alumina-Tushen Porous yumbu injin tsotsa don Thin Wafer Handling
An ƙera bututun mai ramuka na St.Cera daga Al₂O₃ mai ƙarfi 99.6% tare da buɗaɗɗen rami mai sarrafawa na 30-45% da girman rami ɗaya wanda ya kama daga 10 zuwa 50 μm. Ba kamar bututun mai ramuka ba, saman mai ramuka yana ba da injin tsabtace iska mai rarrabawa a duk bayan wafer ɗin, yana kawar da alamar gefen kuma yana ba da damar riƙewa mai laushi na siririn (≤100 μm) ko wafers masu lanƙwasa. Kayan yana ba da ƙarfin lanƙwasa ≥250 MPa da kwanciyar hankali na zafi har zuwa 400°C a cikin iska.
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Farantin Rarraba Iskar Gas na Alumina don Kan Shawa na CVD/PVD
An yi amfani da farantin rarraba iskar gas na St.Cera (kan shawa) daidai gwargwado daga yumbu mai ƙarfi 99.8% na alumina. Yana da jerin ƙananan ramuka (diamita 0.3–1.5 mm) waɗanda ke tabbatar da kwararar iskar gas iri ɗaya a saman wafer yayin aiwatar da CVD, PVD, ko ALD. Ƙarfin dielectric na farantin (>15×10⁶ V/m) da juriyar plasma sun sa ya zama dole don adana siraran fim na semiconductor.
